Electron-electron interactions in Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on Si substrates

CHI-TE LIANG2018-09-102018-09-102007http://www.scopus.com/inward/record.url?eid=2-s2.0-33846260161&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/330966[SDGs]SDG7Electron-electron interactions in Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on Si substratesjournal article10.1063/1.24307782-s2.0-33846260161WOS:000243582000042