馮哲川臺灣大學：光電工程學研究所林宏橋Lin, Hung-ChiaoHung-ChiaoLin2007-11-252018-07-052007-11-252018-07-052005http://ntur.lib.ntu.edu.tw//handle/246246/50728chapter 1, we will first discuss the development of Raman scattering and its basic theory. Further, the spacial correlation model which is used in the this chapter to realize the characterization of AlInGaP thin films will be performed. And about the thin films, two series of (AlxGa1-x)0.5In0.5P films were grown on lattice-matched GaAs by low pressure metalorganic chemical vapor deposition under different conditions and studied by Nomarski microscopy (NM), atomic force microscopy (AFM), photoluminescence (PL) and Raman scattering. NM and AFM images show cross-hatch patterns, related to dislocations and lattice mismatch, from one set of samples, but none from another set of films. Comparative PL and Raman measurements and analyses indicated the correlation between surface and optical properties. The degree of variations in compositions and film quality with the growth conditions were found from the spectral analyses. Raman spectral features are more sensitive to the sample growth parameter variations. The line shape analysis of line width, integrated intensity ratio and spacial correlation model fittng leads to information about the order of the sample crystalline quality. And comparison of these measurement results, the results from spacial correlation model analysis will be identified with the others. Accordingly, this method is more convenient method to characterize the crystalline quality. chapter 2, we will discuss the electronic Raman scattering based on the LO phonon-plasmon interaction effect, and first interpret the motivation and relative application. Furthermore, since the scattering theory is very miscellaneous, the theory from the fundamental to the forming model will be completely performed. Under different considerations, the mechanisms here will focus on the charge density fluctuation, deformation-optical and electro-optical effect and their perturbed result. After the basic theory, the simulation on the GaN and InN material will be also performed and separately predict the both wave vector dependent (long wave length) and wave vector nonconservation effect. We have prepared the Hall measured data of GaN samples to be a contrast and compare with the simulation results respectively. Likewise, the simulation results of the wave vector nonconservation are very unusual to the other published papers but consisted to the basic theory. Accordingly, we will comment on these papers (provide 3 Physical Review B papers). Finally, we will use these points to reform another reasonable model so that the more accurate recursive data to the Hall measurement could be obtained. The result consists with our points.Figure List III Table List VII Chapter 1 Characterization of AlInGaP Thin Film 1 Abstract 1 1.1 Introduction 2 1.1.1 Raman scattering 2 1.1.2 AlGaInP Material 4 1.2 Theory 5 1.2.1 Raman spatial correlation model 5 1.3 Experiment 8 1.3.1 Samples and experiment equipment 9 1.3.2 Surface morphology from Nomarski interference microscopy 10 1.3.3 Surface morphology from atomic force microscopy (AFM) 11 1.3.4 Photoluminescence (PL) 12 1.3.5 Raman Scattering 14 1.4 DISCUSSION 16 1.5 CONCLUSIONS 22 Reference 24 Chapter 2 Electronic Raman Scattering in GaN 33 Abstract 33 2.1 Introduction (motivation) 34 2.2 Theory 35 2.2.1 Light Scattering from Free Carrier 35 2.2.2 Light Scattering from the Deformation Potential and Electro-Optical Effect 48 2.2.3 Dielectric Function 54 2.3 Sample Preparation and measurement system 57 2.3.1 Samples 57 2.3.2 Raman measurement 58 2.3.3 Hall measurement 58 2.4 Results and Discussion 60 2.4.1 Simulation of Dielectric Function by Drude Model: the Wave Vector independent Case 60 2.4.2 LO Phonon-Plasmon Interaction Fitting In GaN: the Wave Vector Independent Case 73 2.4.3 Simulation of LO Ponon-Plasmon Interaction in GaN: the Wave Vector Dependent Case 86 2.4.4 LO Phonon-Plasmon Interaction Fitting In GaN: the Wave Vector dependent Case 113 2.5 Conclusion 122 Reference 1245892309 bytesapplication/pdfen-US拉曼氮化鎵聲子電漿子電漿RamanGaNPhononPlasmonPlasmathesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/50728/1/ntu-94-R92941026-1.pdf