Yang, BBYangYe, PDPDYeKwo, JJKwoFrei, MRMRFreiGossmann, H-JLH-JLGossmannMannaerts, JPJPMannaertsSergent, MMSergentMINGHWEI HONGNg, KKKKNgBude, JJBude2018-09-102018-09-102002http://scholars.lib.ntu.edu.tw/handle/123456789/297854DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layerconference paper