Kwo, J.J.KwoMINGHWEI HONGKortan, A.R.A.R.KortanQueeney, K.L.K.L.QueeneyChabal, Y.J.Y.J.ChabalOpila, R.L.R.L.OpilaMuller, D.A.D.A.MullerChu, S.N.G.S.N.G.ChuSapjeta, B.J.B.J.SapjetaLay, T.S.T.S.LayMannaerts, J.P.J.P.MannaertsBoone, T.T.BooneKrautter, H.W.H.W.KrautterKrajewski, J.J.J.J.KrajewskiSergnt, A.M.A.M.SergntRosamilia, J.M.J.M.Rosamilia2019-12-272019-12-272001https://scholars.lib.ntu.edu.tw/handle/123456789/443476Properties of high εΊ₯ gate dielectrics Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> for Sijournal article10.1063/1.13526882-s2.0-0035309756https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035309756&doi=10.1063%2f1.1352688&partnerID=40&md5=a50812c1fee497da436dffb32fd8d4ca