Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowires

Lin, H.-M.H.-M.LinChen, Y.-L.Y.-L.ChenYang, J.J.YangLiu, Y.-C.Y.-C.LiuYin, K.-M.K.-M.YinKai, J.-J.J.-J.KaiChen, F.-R.F.-R.ChenChen, L.-C.L.-C.ChenYANG-FANG CHENChen, C.-C.C.-C.Chen2018-09-102018-09-102003http://www.scopus.com/inward/record.url?eid=2-s2.0-0141632824&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/301378A convenient thermal CVD route to core−shell GaP@GaN and GaN@GaP nanowires is developed. The structural analyses indicate that the nanowires exhibit a two-layer and wirelike structure. High-resolution transmission electron microscopy (HRTEM) images reveal misfit dislocation loops at the interface of the nanowires. Unusual temperature dependences of the photoluminescence (PL) intensity of GaP@GaN nanowires are observed, and they are interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. In the Raman spectra of GaN@GaP nanowires, an unexpected peak at 386 cm-1 is found and assigned to a surface phonon mode.Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowiresjournal article10.1021/nl03401252-s2.0-0141632824