Feng, S.-W.S.-W.FengCheng, Y.-C.Y.-C.ChengLiao, C.-C.C.-C.LiaoChung, Y.-Y.Y.-Y.ChungCHIH-WEN LIUCHIH-CHUNG YANGLin, Y.-S.Y.-S.LinMa, K.-J.K.-J.MaChyi, J.-I.J.-I.Chyi2018-09-102018-09-10200103701972http://www.scopus.com/inward/record.url?eid=2-s2.0-0035541066&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/292590https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035541066&doi=10.1002%2f1521-3951%28200111%29228%3a1%3c121%3a%3aAID-PSSB121%3e3.0.CO%3b2-I&partnerID=40&md5=ad1a26c7b22b59dcc386c66adfb3989eTwo-component decay of time-resolved photoluminescence (TRPL) intensity in three InGaN/GaN multiple quantum well samples were observed. The first-decay component was attributed to exciton relaxation of free-carrier and localized states; the second-decay one was dominated by the relaxation of localized excitons. The second-decay lifetime was related to the extent of carrier localization or indium aggregation and phase separation. The lifetime of free-carrier states was connected with the defect density. Based on the temperature-dependent data of PL and stimulated emission (SE), the localization energies of the three samples were calibrated to show the consistent trend with the second-decay lifetime and previous material analyses.journal article10.1002/1521-3951(200111)228:1<1212-s2.0-0035541066