Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Shu-Tong ChangMing-Han LiaoChang-Chun LeeJacky HuangBing-Fong HsiehMING-HAN LIAO2021-12-302021-12-302009https://scholars.lib.ntu.edu.tw/handle/123456789/590727Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineeringjournal article