胡振國臺灣大學：電子工程學研究所鄭應山Jeng, Ing-ShanIng-ShanJeng2007-11-272018-07-102007-11-272018-07-102004http://ntur.lib.ntu.edu.tw//handle/246246/57597Abstract When the MOS tunneling diode with ultra-thin oxide was positively biased , the gate current that saturated rapidly within 0.5 V was affected by its substrate temperature significantly . The gate current is controlled by the minority carrier . The current of MOS structure depends on the temperature , so we can use it to measure the temperature . The MOS tunneling diode exhibits the following basic characteristics : 1 . The current of the MOS tunneling diode is very small . 2 . The current of the MOS tunneling diode is not linearly dependent on the temperature . Because we want to use the MOS tunneling diode for the measurement of the temperature , we must overcome two difficulties . The saturated MOS current is mainly caused by the minority carrier-limited current , so it is very small . Because we want to use the MOS current to measure the temperature , we must amplify the MOS current . We use two npn transistors for the current amplifier . Because we want to use the MOS current for the temperature measurement , its temperature dependence should be linear . We use a diode for the implementation of the voltage with a linear temperature dependence . The voltage Vd of the diode varies linearly with temperature , but it is very small . We use an op to amplify the voltage Vd of the diode . Because the I(C)-V(BE) relationship of the npn transistor in the active region is like the relationship I-V of the diode , we can use the npn transistor in place of the diode . There are two kinds of circuits that show the linear dependence of output voltage on temperature proposed in this work .Contents Table Captions ......................................X Figure Captions .....................................XI Chapter 1 Introduction ...............................1 Chapter 2 Circuit Design..............................7 2.1 Current Amplifier ..........................7 2.2 Analysis of Linear Voltage ..................9 2.3 Analysis of Voltage Amplifier With Single-Ended Output ...............................................11 2.4 Vo Consideration At T=0 ....................15 2.5 Reference Voltage ...........................17 Chapter 3 Results And Discussions ....................45 3.1 The Effect of The Parameter Is On Vo .............45 3.2 Nonideal Conditions ..............................46 3.3 Simplified Circuit ...............................49 3.4 The Effect of The Parameter Rz On Vo .............51 3.5 Another Simplified Circuit .......................55 Chapter 4 Conclusion .................................77 References ...........................................791118846 bytesapplication/pdfen-USMOS穿透二極體MOStunneling diodethesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/57597/1/ntu-93-R91943112-1.pdf