Enhancement of gate-bias and current stress stability of p-type SnO thin-film transistors with SiNx/HfO2 passivation layers

S.-M. HsuY.-S. LiM.-S. TuJ.-C. HeI-C. ChiuP.-G. ChenM.-H. LeeJ.-Z. ChenI-C. ChengI-CHUN CHENG2019-10-312019-10-312016https://scholars.lib.ntu.edu.tw/handle/123456789/429488Enhancement of gate-bias and current stress stability of p-type SnO thin-film transistors with SiNx/HfO2 passivation layersconference paper