鄭鴻祥臺灣大學:電子工程學研究所洪健洲Hong, Chien-ChouChien-ChouHong2010-07-142018-07-102010-07-142018-07-102009U0001-0608200913520600http://ntur.lib.ntu.edu.tw//handle/246246/189189在這篇論文中我們將先簡介半導體產業的發展現況，及稀磁性半導體的崛起以及已知的應用。第二章中將探討使用分子束磊晶系統（molecular beam epitaxy, MBE）所成長之IV族稀磁性半導體—鍺錳合金（GeMn），從物理背景到近年來自各界的研究成果。接著介紹稀磁性半導體在光激發螢光頻譜（photoluminescence, PL）在中低量磁場中的變化，分別討論下列各個效應的物理背景：塞曼效應（Zeeman effect, 原子因處在磁場裡, 而其譜線發生分裂的現象）、反磁性位移（diamagnetic shift）、以及電子自旋之sp-d軌域交換交換效應（sp-d exchange interaction）造成的光譜偏移現象。三章我們簡介實驗樣品之材料，回顧一些同樣成長條件的特性量測結果，以及光激發螢光光譜實驗的方法架構。後在第四章將討論光激發螢光光譜的結果並且使用Matlab來進行光譜峰值能量偏移的模擬。In this paper we will first deal with the development of the semiconductor industry, the current situation and the rise of diluted magnetic semiconductor applications, as well as known.n the second chapter we will explore the possibility of using molecular beam epitaxy system (molecular beam epitaxy, MBE) to grow Ge-Mn alloy (GeMn) group IV diluted magnetic semiconductor. Physical background and the recent research results from all scientists around the world will also be presented. The photoluminescence spectrums for diluted magnetic semiconductors vary with low-volume changes in magnetic field. We’ll discuss some effects that result in spectral shift and their physical background: Zeeman effect (the splitting of a spectral line into several components in the presence of a static magnetic field), diamagnetic shift, as well as the electron spin-orbit sp-d exchange interaction.n chapter 3 we illustrate the experimental samples of our material, recalling some characteristics of the same growth conditions. Then we’ll introduce the structure of our photoluminescence spectrum experiment.inally, in chapter 4 we will discuss the results of our photoluminescence spectrum experiment and then use Matlab to simulate the energy shift.口試委員審定書 i文摘要 iibstract iii謝 iv錄 v目錄 vii一章 序言 11.1半導體產業 11.2稀磁性材料之發展 51.3參考文獻 8二章 理論及材料背景 92.1磁性半導體 9 2.1.1 稀磁性半導體 9 2.1.2稀磁性半導體之製作技術 102.2磊晶技術 14 2.2.1分子束磊晶系統 14 2.2.2 反射式高能量電子繞射 152.3磁場中光譜之遷移 19 2.3.1塞曼效應 19 2.3.2反磁性位移 20 2.3.3自旋交換效應 212.4參考文獻 26三章 材料製備及實驗設置 283.1鍺錳材料樣品 283.2光激發螢光光譜實驗 34 3.2.1實驗架設 343.3參考文獻 36四章 實驗結果分析及討論 374.1光激發螢光光譜 374.2光譜偏移之模擬 434.3參考文獻 47五章 結論及展望 485.1結論 485.2未來工作 483931139 bytesapplication/pdfen-US鍺錳稀磁性半導體光激發螢光光譜GeMnDMSPhotoluminescencethesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/189189/1/ntu-98-R95943136-1.pdf