Chen, Y.C.Y.C.ChenLai, R.R.LaiLin, E.E.LinBlock, T.T.BlockYen, H.C.H.C.YenStreit, D.D.StreitJones, W.W.JonesLiu, P.H.P.H.LiuDia, R.M.R.M.DiaHuang, P.-P.P.-P.HuangHUEI WANGTIAN-WEI HUANG2020-06-042020-06-041997https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031144703&doi=10.1109%2f75.569728&partnerID=40&md5=4d9c6afa2115748b3a4af0f919d3bc13We have developed W-band high-power monolithic microwave integrated circuit (MMIC) amplifiers using passivated 0.15-μm gate length InGaAs/InAlAs/InP HEMT's. A 640-μm single-stage MMIC amplifier demonstrated an output power of 130 mW with 13% power-added efficiency and 4-dB associated gain at 94 GHz. This result represents the best output power to date measured from a single fixtured InP-based HEMT MMIC at this frequency.[SDGs]SDG7Current voltage characteristics; Gain measurement; High electron mobility transistors; Integrated circuit manufacture; Optimization; Power amplifiers; Semiconducting gallium arsenide; Semiconducting indium phosphide; High power monolithic microwave integrated circuit (MMIC) amplifiers; Monolithic microwave integrated circuitsjournal article10.1109/75.5697282-s2.0-0031144703