JAMES-B KUOYAO-WEN CHANGChen Y.-G.2023-06-092023-06-091996214922https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030148819&doi=10.1143%2fjjap.35.2573&partnerID=40&md5=fa59a9b8877be50a405c657245bb0f56https://scholars.lib.ntu.edu.tw/handle/123456789/632272We report an analytical velocity overshoot model for 0.1μm N-channel metal-oxide-silicon (NMOS) devices taking into account energy transport. As verified by 2D simulation results, the analytical velocity overshoot model gives a good prediction of the IV characteristics.Deep submicron; Energy transport; NMOS; Relaxation time; Velocity overshootComputer simulation; Current density; Electron energy levels; Electronic density of states; Energy transfer; Mathematical techniques; Relaxation processes; Semiconductor device models; Transport properties; Analytical velocity overshoot model; Deep submicron; Energy balance equation; Energy transport; Model derivation; Relaxation time; Two dimensional simulation; Velocity overshoot; MOS devicesjournal article10.1143/jjap.35.25732-s2.0-0030148819