An X-band, 23.8-dBm fully integrated power amplifier with 25.8% PAE in 0.18-μm CMOS technology

Chi, P.-S.P.-S.ChiTsai, Z.-M.Z.-M.TsaiKuo, J.-L.J.-L.KuoLin, K.-Y.K.-Y.LinWang, H.H.WangKUN-YOU LIN2018-09-102018-09-102010http://www.scopus.com/inward/record.url?eid=2-s2.0-78649579418&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/357829An X-band, 23.8-dBm fully integrated power amplifier with 25.8% PAE in 0.18-μm CMOS technologyconference paper