2016-04-012024-05-17https://scholars.lib.ntu.edu.tw/handle/123456789/680844摘要：本次計畫在於開發高電壓低損耗GaN on Si元件，磊晶方面將GaN 之異質接面結構，生長於Si基板上，磊晶方面由電光所之技術磊在8” Si 基板上，切成破片後，以此製作元件，製作元件則由本實驗室負責製作高電子遷移率電晶體(HEMT)，目前直接磊晶所製作出的元件臨界電壓小於0 V，在元件使用上損耗過大，且基於可以承受高電壓的情形下，預計作出臨界電壓大於2 V且崩潰電壓Vbd > 600V的元件，在使用GaN為材料製作高功率元件的條件下，希望可以製作出順向導通電流密度Ion > 450mA/mm ，在CMOS 匹配的製程中以及成本考量上，在製作元件過程中使用的金屬將不使用金來完成此次計畫。<br> Abstract: This project is to develop high-power and low-consumption GaN device on silicon substrate. The 8’’ epitaxial Si wafer will be provided by Industrial Technology Research Institute. Our lab will be in charge of fabricating high-electron- mobility transistors (HEMT). Compared with conventional HEMT, which is operated in depletion mode (VTH < 0 V), our goal is to achieve enhancement mode (VTH > 2 V) device with large saturation current (Ion > 450 mA/mm) and large breakdown voltage (Vbd > 600 V). Also, in order to be compatible with silicon CMOS process and lower the cost, we will develop a gold-free process. High-power operation with low-consumption is the future trend for next generation devices, and GaN shows great potential among several wild bandgap materials. Together with ITRI material characterization and NTU process technique, we believe that we can harvest fruitful research results for GaN-on-Si devices.高電子遷移率電晶體增強式電晶體HEMTenhancement mode transistor