余政靖2006-07-252018-06-282006-07-252018-06-282003http://ntur.lib.ntu.edu.tw//handle/246246/9343此論文的主要目的，首先我們發現軟著陸技術與CMP 的相似性，並將其於應用CMP 製程上，推導出最適化控制的解決方法，來縮小凹陷值與磨除時間。另外根據平坦化製程中的MIT 模式，我們引進新參數修正，推導出圖形凹凸面的磨除速率為線深、圖形密度、臨界線深和原始磨除速率的關係式，藉此關係式可計算出在平坦化規格下固定固定原始磨除速率所需磨除時間與所需沉積金屬厚度，為trade-off 形式。而後推導出最適化的原始磨除速率控制模式，可將磨除時間和所需沉積金屬厚度減少至最小。最後利用先前所推導出的關係式應用於過度研磨製程，其中平坦化之後的厚度和階深即為過度研磨所需磨除厚度和起始缺陷值。In this work, an analogy between the soft landing of a spacecraft and CMP operation is established and, subsequently, a polishing strategy is proposed. The objective of soft landing is to minimize the landing time, a minimum time problem, while ensure a safe landing without damaging the vehicle. A similar situation is encountered in the operation of CMP. Despite recent advances in copper (Cu) CMP technology, it still suffers pattern dependence that results in large variation across the wafer. Much of the past research focuses on the effects of pattern geometry on the interlevel dielectric (ILD) layer. Nonetheless, the semi-physical pattern dependent model can be extended directly to the copper removal. In this work, the model of Boning and co-workers is extended to Cu CMP by taking the pattern geometry into account. Finally, the pattern dependent model is extended to the over-polish stage. Therefore, an optimal operation strategy can be derived to achieve prescribed dishing limit while maintaining a high throughput with minimal ECP Cu thickness. This is achieved by selecting an optimal final step height in the planarization stage and devising the over-polishing trajectory. Again, practical considerations lead to the discretization of the continuous trajectory into finite stages, a sub-optimal control law.application/pdf1919416 bytesapplication/pdfzh-TW國立臺灣大學化學工程學系暨研究所reporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/9343/1/912214E002036.pdf