Investigation of the two-state current conduction mechanism in high-kSiO 2 stacked dielectric with high bandgap 4H-SiC substrate

Chiang, J.-C.J.-C.ChiangHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102011http://www.scopus.com/inward/record.url?eid=2-s2.0-81355136244&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/363032Investigation of the two-state current conduction mechanism in high-kSiO 2 stacked dielectric with high bandgap 4H-SiC substratejournal article10.1149/2.042112jes