Using anodization to oxidize ultrathin aluminum film for high-k gate dielectric application

JENN-GWO HWU2018-09-102018-09-102003http://www.scopus.com/inward/record.url?eid=2-s2.0-0038783313&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/301811Using anodization to oxidize ultrathin aluminum film for high-k gate dielectric applicationjournal article10.1149/1.1577545