High performance Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>)/Ge MOS devices without interfacial layers

Chu, L.K.L.K.ChuChu, R.L.R.L.ChuHuang, M.L.M.L.HuangTung, L.T.L.T.TungLin, T.D.T.D.LinChang, C.C.C.C.ChangKwo, J.J.KwoMINGHWEI HONG2019-12-272019-12-272009https://scholars.lib.ntu.edu.tw/handle/123456789/443395http://scholars.lib.ntu.edu.tw/handle/123456789/349406High performance Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>)/Ge MOS devices without interfacial layersconference paper10.1109/ESSDERC.2009.53314802-s2.0-72849148499https://www.scopus.com/inward/record.uri?eid=2-s2.0-72849148499&doi=10.1109%2fESSDERC.2009.5331480&partnerID=40&md5=bdf85ba8911fd5e81e665cf9e4824d80