Fu, S.-L.S.-L.FuJENN-GWO HWU2018-09-102018-09-101989https://www.scopus.com/inward/record.uri?eid=2-s2.0-0024719143&doi=10.1016%2f0038-1101%2889%2990139-1&partnerID=40&md5=ff9a0e0ab363133f920d0ba3817dc4bahttp://scholars.lib.ntu.edu.tw/handle/123456789/347708It was experimentally observed that MOS devices prepared by repeated irradiation-then-anneal treatments were more radiation hard than those without such treatments. A modified isochronal annealing method based on the newly reported flat-band-condition annealing approximation was used in this work to examine the activation energy distribution of the radiation-induced positive charges. It was found that an MOS device after X-ray irradiation with a dose rate of 200 k rads (SiO2)/min for 5 min exhibited a distribution of activation energy ranging from 1.2 to 1.8 eV. A sample which was subjected to a repeated irradiation-then-anneal treatments exhibited a significant reduction in the distribution of activation energy in the low energy region of 1.2-1.5 eV, but not in the high energy region of 1.5-1.8 eV. The activation energy distribution for samples prepared under various postoxidation treatments are discussed. © 1989.Heat Treatment--Annealing; Oxides--Radiation Effects; Semiconductor Materials--Radiation Effects; Activation Energy Distribution; Irradiation-Then-Anneal Treatments; Isochronal Annealing; Radiation Hardness; Semiconductor Devices, MOSjournal article10.1016/0038-1101(89)90139-12-s2.0-0024719143