Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers

Chu, LKLKChuChu, RLRLChuLin, TDTDLinLee, WCWCLeeLin, CACALinHuang, MLMLHuangLee, YJYJLeeKwo, JJKwoMINGHWEI HONG2018-09-102018-09-102010http://scholars.lib.ntu.edu.tw/handle/123456789/357466Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layersjournal article