Li, Kai-ShinKai-ShinLiChang, Yin-MingYin-MingChangAgilan, SanthanamSanthanamAgilanHong, Jhen-YongJhen-YongHongTai, Jung-ChiJung-ChiTaiChiang, Wen-ChungWen-ChungChiangFukutani, KeisukeKeisukeFukutaniDowben, P. A.P. A.DowbenMINN-TSONG LIN2018-09-102018-09-102011http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000290708400001&KeyUID=WOS:000290708400001http://scholars.lib.ntu.edu.tw/handle/123456789/364043Electrons may experience inelastic coupling with the organic spacer layer during tunneling between two ferromagnetic electrodes. To probe the transport behavior of spin-polarized electrons in organic materials, organic spin valves were fabricated utilizing a relatively thin organic barrier of 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) dusted with alumina at the organic/ferromagnetic interfaces. These structures, with an organic barrier layer, exhibited magnetoresistance up to 12% at room temperature. In studies of the inelastic tunneling spectrum, the observed characteristic peak of the organic layer provides direct evidence of the interplay between the spin-polarized electrons and the organic molecules. Combining the inelastic tunneling results with a simple molecular vibration calculation yields further information on the configuration of the molecular thin film and the possible tunneling states of the spin-polarized electrons. Such interplay indicates a true transport of spin-polarized electrons through organic material rather than through defects or interdiffusion compounds formed at the interfaces within the organic spin valve.journal article10.1103/PhysRevB.83.1724042-s2.0-79961124108WOS:000290708400001