郭博成2006-07-252018-06-282006-07-252018-06-282005http://ntur.lib.ntu.edu.tw//handle/246246/12496此研究係研製單層CoTbAg 薄膜以應用於近場光學寫入與磁通量讀取的記錄媒體。採用直流磁控濺鍍，在玻璃基板及表 面自然氧化之Si 基板上鍍製Co68.48-XTb30.52AgX 合金薄膜，其中X= 0~25 at.%;並以射頻磁控濺鍍在薄膜上下各濺鍍 一層SiNx 保護層，避免其氧化。探討非磁性元素Ag 之含量對Co68.48-XTb30.52AgX 薄膜之微結構及磁性質的影響。X-ray 繞射及TEM 電子繞射結果顯示所有的薄膜均為非晶質。其中Co67.23Tb30.52Ag2.25 薄膜在室溫的Ms 值約為310 emu/cm3, Hc⊥值為3100Oe，當溫度由室溫上升至200 °C 時，其Ms 及Hc⊥值急速下降。此薄膜之補償溫度Tcomp 約為225 °C，具有應用於近場光學寫入與磁通量讀取的記錄媒體之潛力。This work fabricates a single-layer CoTbAg film for near-field optical write and magnetic flux detection recording medium application. Co68.48-XTb30.52AgX films with X= 0~25 at.% are deposited on glass and naturally oxidized silicon wafer substrate by dc magnetron sputtering. The magnetic film is sandwiched between SiNx protective layers to prevent oxidization. The effects of non-magnetic element Ag content on the magnetic properties and microstructure of the film are investigated. X-ray diffraction and transmission electron microscope diffraction patterns revealed that all the films are amorphous. The saturation magnetization of the Co67.23Tb30.52Ag2.25 film is about 310 emu/cm3; perpendicular remanence is about 255 emu/cm3, and the perpendicular coercivity is about 3100 Oe at room temperature. The saturation magnetization and perpendicular coercivity decrease rapidly as temperature increases from room temperature to 200 °C. The compensation temperature Tcomp of this film is about 225 °C. This film is a promising candidate for near-field optical write and magnetic flux detection recording media applications.application/pdf144717 bytesapplication/pdfzh-TW國立臺灣大學材料科學與工程學系暨研究所磁控濺鍍CoTbAg 薄膜非晶質薄膜磁性質magnetron sputteringCoTbAg filmamorphous thin filmsmagnetic propertiesreporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/12496/1/932216E002023.pdf