Influence of the thickness variation of the SiOx layer on the Si quantum dots based MOSLED

Lai, B.-H.B.-H.LaiCheng, C.-H.C.-H.ChengGONG-RU LIN2018-09-102018-09-102010http://www.scopus.com/inward/record.url?eid=2-s2.0-79851497080&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/358008Influence of the thickness variation of the SiOx layer on the Si quantum dots based MOSLEDconference paper10.1109/ACP.2010.5682837