2023-01-012024-05-13https://scholars.lib.ntu.edu.tw/handle/123456789/654597矽基量子點量子計算由於其長自旋去相干性、擴充性、相容於矽大型積體電路以及低溫互補式矽金氧半元件等優勢，近來引起了非常多的注意。與矽量子點相關的物理研究已非常完整，但對於量子計算應用而言則需要大尺度量子位元，而目前並沒有相關的工程研究計畫投入，舉例來說，量子點陣列的設計及需要連結量子點物理與元件製程。因此，本計畫旨在發展量子點元件模型與陣列的模擬開發，以作為未來大行量子位元系統的基礎。我們將開發一套可用於大型量子點陣列之量子電子自動化設計軟體環境，目標設定再利用該軟體呈現在及低溫下的庫侖阻塞與電荷穩定圖，接著我們會利用軟體設計量子點元件，並針對大型量子位元設計最佳化量子元件，據此製作元件量測並將實驗結果與模擬結果比對。藉由開發此量子模擬套件，矽量子位元之良率與可靠性將大幅提升，將有助於未來量子位元系統的擴展。 Si-based quantum dots (QDs) for quantum computing (QC) have attracted a lot of attentions due to its long spin decoherence, scalability, compatibility to Si VLSI technology and cryo-CMOS devices. While most of relevant physics in Si QDs has been studied very carefully, for useful QC applications, large-scale quantum bits (qubits) are required and there is no much engineering work demonstrated yet. For example, there is no relevant work on the design of QD array to connect the QD physics and device fabrication. Thus, in this project, we aim for developing a device model and simulation of QD arrays for large-scale qubit systems. We will develop a quantum CAD environment for the design of quantum dot devices for large-scale systems. Our goal is to demonstrate Coulomb blockade and charge stability diagrams at low temperatures. Then we will investigate the multigate structures to optimize the QD device performance for large-scale qubit systems. We will also apply the simulations results to the device structures and compare to experimental data. By developing this quantum simulation package, Si qubits can be fabricated with high yields and reliability, which is extremely important for future scaling of qubit systems.量子點;量子位元;元件模擬;quantum dots; quantum bits; device simulation