Fu, ShihChiShihChiFuKUO-HUANG HSIEHLON A. WANG2009-03-252018-07-062009-03-252018-07-0620010277786Xhttp://ntur.lib.ntu.edu.tw//handle/246246/148174https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034758440&doi=10.1117%2f12.436906&partnerID=40&md5=a5050d6e880a157e6de5a737de423e9aThe chemistry of acid-catalyzed dehydration reaction and followed by crosslinking of the tert-alcohol group in the cycloolefin photoresists was used to tailor the performance of the photoresists for 193 nm lithography. A radiation-sensitive photoacid generator (PAG) in this chemically amplified photoresist (CAMP) can change the polarity of the exposed area of the resist and exhibit a negative-tone behavior. The cycloolefin resists are synthesized by the free radical copolymerization of alicyclic monomer and maleic anhydride, and/or by the cationic polymerization of alicyclic monomer via Pd catalyst followed by the attaching of tert-alcohol group into the resist. The side reaction of cycloolefin copolymer was observed at the temperature below the post exposure baking (PEB) temperature, but this problem can be eliminated by the introduction of isobornyl methacrylate into the polymer. The lithographic performance of the resists was investigated by using isopropyl alcohol as a developer under various processing conditions. The results demonstrate that these resists are the promising candidates for being used in 193 nm lithography.application/pdf1449980 bytesapplication/pdfen-US193 nm lithography; CAMP; Cycloolefin; Negative-tone resist[SDGs]SDG6Alcohols; Cationic polymerization; Copolymers; Free radical polymerization; High temperature effects; Light polarization; Monomers; Olefins; Cycloolefin photoresists; Post exposure baking (PEB) temperature; Photoresistsconference paper10.1117/12.4369062-s2.0-0034758440http://ntur.lib.ntu.edu.tw/bitstream/246246/148174/1/33.pdf