A Redox-Based Resistive Switching Memory Device Consisting of Organic–Inorganic Hybrid Perovskite/Polymer Composite Thin Film

Ercan, E.E.ErcanChen, J.-Y.J.-Y.ChenTsai, P.-C.P.-C.TsaiLam, J.-Y.J.-Y.LamHuang, S.C.-W.S.C.-W.HuangCHU-CHEN CHUEHWEN-CHANG CHEN2019-11-212019-11-2120172199160Xhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85037746175&doi=10.1002%2faelm.201700344&partnerID=40&md5=d7461b5f569f783d2b7d6ccc66f670fchttps://scholars.lib.ntu.edu.tw/handle/123456789/431906A Redox-Based Resistive Switching Memory Device Consisting of Organic–Inorganic Hybrid Perovskite/Polymer Composite Thin Filmjournal article10.1002/aelm.2017003442-s2.0-85037746175