Yang, Yao-JoeYao-JoeYangYang, Y.J.Y.J.YangKuo, Wen-ChengWen-ChengKuoKuo, W.C.W.C.KuoFan, Kuang-ChaoKuang-ChaoFanFan, K.C.K.C.FanYangYaoJoeYangYJ2008-11-052018-06-282008-11-052018-06-28200600214922http://ntur.lib.ntu.edu.tw//handle/246246/85995https://www.scopus.com/inward/record.uri?eid=2-s2.0-31544455554&doi=10.1143%2fJJAP.45.305&partnerID=40&md5=72eaeadca606798d9b11c45f94bc0088In this work, we present a single-run single-mask (SRM) process for fabricating suspended high-aspect-ratio structures on standard silicon wafers using an inductively coupled plasma-reactive ion etching (ICP-RIE) etcher. This process eliminates extra fabrication steps which are required for structure release after trench etching. Released microstructures with 120 μm thickness are obtained by this process. The corresponding maximum aspect ratio of the trench is 28. The SRM process is an extended version of the standard process proposed by BOSCH GmbH (BOSCH process). The first step of the SRM process is a standard BOSCH process for trench etching, then a polymer layer is deposited on trench sidewalls as a protective layer for the subsequent structure-releasing step. The structure is released by dry Isotropic etching after the polymer layer on the trench floor is removed. All the steps can be integrated into a single-run ICP process. Also, only one mask is required. Therefore, the process complexity and fabrication cost can be effectively reduced. Discussions on each SRM step and considerations for avoiding undesired etching of the silicon structures during the release process are also presented. © 2006 The Japan Society of Applied Physics.application/pdf210365 bytesapplication/pdfen-USBulk micromachining; Deep reactive ion etching (DRIE); High-aspect-ratio-structure (HARS); Inductively coupled plasma (ICP); Suspended microstructuresAspect ratio; Inductively coupled plasma; Masks; Microstructure; Polymers; Silicon wafers; Bulk micromachining; Deep reactive ion etching (DRIE); High-aspect-ratio-structures (HARS); Single-run single-mask (SRM) processes; Suspended microstructures; Reactive ion etchingjournal article10.1143/JJAP.45.3052-s2.0-31544455554http://ntur.lib.ntu.edu.tw/bitstream/246246/85995/1/04.pdf