Lin H.-M.Yang J.Chen Y.-L.Liu Y.-C.Yin K.-M.Kai J.-J.Chen F.-R.Chen L.-C.Chen Y.-F.Chen C.-C.LI-CHYONG CHEN2022-08-092022-08-09200302729172https://www.scopus.com/inward/record.uri?eid=2-s2.0-12144285923&doi=10.1557%2fproc-776-q2.6&partnerID=40&md5=371ca7f94ec8ebf2a6ce3ecf39b1a529https://scholars.lib.ntu.edu.tw/handle/123456789/616409High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.[SDGs]SDG9Crystal growth;Gallium nitride;Optical properties;Photoluminescence;Piezoelectricity;Raman scattering;Semiconductor quantum dots;Transmission electron microscopy;X ray diffraction analysis;Lattice mismatch;Nanowires;Nanostructured materialsconference paper10.1557/proc-776-q2.62-s2.0-12144285923