Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) passivation (Applied Physics Letters (2011) 98 (062108))

Lin, C.A.C.A.LinChiu, H.C.H.C.ChiuChiang, T.H.T.H.ChiangLin, T.D.T.D.LinChang, Y.H.Y.H.ChangChang, W.H.W.H.ChangChang, Y.C.Y.C.ChangWang, W.-E.W.-E.WangDekoster, J.J.DekosterHoffmann, T.Y.T.Y.HoffmannMINGHWEI HONGKwo, J.J.Kwo2019-12-272019-12-272011https://scholars.lib.ntu.edu.tw/handle/123456789/443372Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) passivation (Applied Physics Letters (2011) 98 (062108))other10.1063/1.35660142-s2.0-79952675439https://www.scopus.com/inward/record.uri?eid=2-s2.0-79952675439&doi=10.1063%2f1.3566014&partnerID=40&md5=3a634698501adf3c7c559062f5dea9bd