Hung, J.J.HungSI-CHEN LEEChia, C.-T.C.-T.Chia2020-06-112020-06-11200413880764https://scholars.lib.ntu.edu.tw/handle/123456789/498717https://www.scopus.com/inward/record.uri?eid=2-s2.0-8844250756&doi=10.1007%2fs11051-004-8917-5&partnerID=40&md5=00fbb8d6aba2e76a75dd09c686462084Spherical gallium arsenic nanoparticles prepared by thermal evaporation method have been fabricated successfully. The structural and optical properties of GaAs nanoparticles are studied in detail. It is found that while the growth pressure rises from 0.4 to 5 Torr, the average size of GaAs nanoparticles increases from 6 to 12 nm and standard deviation keeps almost the same (∼2 nm) except for 0.5 Torr. By using transmission electron microscopy and Raman spectra, a critical preparation condition has been found which characterize the amorphous to crystal transition of GaAs nanoparticles.GaAs; Nanoparticle; Structural properties; Thermal evaporationAmorphous materials; Crystal structure; Evaporation; Inert gases; Nanostructured materials; Optical properties; Pressure effects; Raman scattering; Semiconductor quantum dots; Thermoanalysis; Crystal transition; Pressure rate; Standard deviation; Thermal evaporation; Semiconducting gallium arsenidejournal article10.1007/s11051-004-8917-52-s2.0-8844250756