LUNG-HAN PENGChuang, C.-W.C.-W.ChuangLou, L.-H.L.-H.Lou2009-03-182018-07-062009-03-182018-07-06199900036951http://ntur.lib.ntu.edu.tw//handle/246246/145981https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033534876&doi=10.1063%2f1.123370&partnerID=40&md5=0432971fb735d5cbb915bee801c25bd2We investigated the carrier-injection effects in the emission spectrum of strained GaN/InGaN/ AIGaN quantum well (QW) blue emitters using a pulsed current excitation technique. Spectral blueshift as large as 80 meV in the emission peak energy was observed as the injection current increases from 1 mA to 1 A. Based on a self-consistent calculation that couples the Poisson equation with a wurtzite-type Rashba-Sheka-Pikus Hamiltonian, four important interactions are evaluated in order to determine the optical properties of InGaN QW. It is shown that the spectral redshifting caused by a piezoelectricity induced quantum confined Stark effect and carrier-induced band gap renormalization is counteracted by a blueshift due to the band filling and charge screening effects. The increase of InGaN QW emission peak energy and intensity with injected carriers suggests a dominant contribution from the latter in a band-to-band recombination process. © 1999 American Institute of Physics.application/pdf108998 bytesapplication/pdfen-USElectric currents; Electroluminescence; Emission spectroscopy; Energy gap; Light emitting diodes; Mathematical models; Piezoelectricity; Semiconducting gallium compounds; Semiconductor quantum wells; Carrier injection effects; Charge screening effects; Optical gain; Pulsed current excitation technique; Stark effect; Light emissionjournal article10.1063/1.1233702-s2.0-0033534876http://ntur.lib.ntu.edu.tw/bitstream/246246/145981/1/02.pdf