Ga<inf>0.51</inf>In<inf>0.49</inf>P/ln<inf>x</inf>Ga<inf>1-x</inf>As/GaA s lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy

Lin, Y.-S.Y.-S.LinLu, S.-S.S.-S.LuPEI-ZEN CHANG2020-04-282020-04-281999https://scholars.lib.ntu.edu.tw/handle/123456789/486862Ga<inf>0.51</inf>In<inf>0.49</inf>P/ln<inf>x</inf>Ga<inf>1-x</inf>As/GaA s lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxyjournal article10.1063/1.3695272-s2.0-0009767708https://www.scopus.com/inward/record.uri?eid=2-s2.0-0009767708&doi=10.1063%2f1.369527&partnerID=40&md5=34b61f8c98c5005a346480b1a5fe23bf