Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effect

H. J. HungJ. B. KuoD. ChenC. S. YehJAMES-B KUO2018-09-102018-09-102009-11http://scholars.lib.ntu.edu.tw/handle/123456789/351958Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effectconference paper