Huang, C.C.C.C.HuangHAO-HSIUNG LIN2020-06-112020-06-111992https://scholars.lib.ntu.edu.tw/handle/123456789/500399https://www.scopus.com/inward/record.uri?eid=2-s2.0-0026868807&doi=10.1049%2fel%3a19920659&partnerID=40&md5=1947572de874228d2435169dd668346dThe first InxGa1−xAs/In0·53Ga0·47As strained emitter heterojunction bipolar transistor (SEHBT), with x = 0−41, grown by molecular beam epitaxy on n+-InP substrate are reported. A small signal current gain of 480 and a small offset voltage of 56 mV were obtained. These good results were achieved with a thin emitter layer of 360 A. © 1992, The Institution of Electrical Engineers. All rights reserved.Bipolar devices; Semiconductor growth; TransistorsHeterojunctions; Molecular beam epitaxy; Semiconducting gallium arsenide; Semiconducting indium compounds; Semiconductor growth; Small offset voltage; Small signal current gain; Strained emitter heterojunction bipolar transistors; Thin emitter layer; Bipolar transistorsjournal article10.1049/el:199206592-s2.0-0026868807