Yu C.-YChen T.CLee M.HHuang S.-HLee L.SCHEE-WEE LIU2023-06-092023-06-092004https://www.scopus.com/inward/record.uri?eid=2-s2.0-14844297748&partnerID=40&md5=d6bdd3d1d023c67e343bbfd19db90e70https://scholars.lib.ntu.edu.tw/handle/123456789/632209Electrical and optical reliability characteristic of Pt/HfO2 gate stack have been investigated. Incorporating deuterium and hydrogen treatment during post-metallization annealing is employed to improve both the electrical and optical reliability of Pt/HfO2 gate stack. For comparison, deuterium-treated technology provides slightly better reliability improvement on both the electrical and optical reliability of Pt/HfO2 gate stack devices. ©2004 IEEE.Annealing; Capacitors; Chemical vapor deposition; CMOS integrated circuits; Current density; Deuterium; Dielectric materials; Doping (additives); Electric resistance; Hydrogen; Leakage currents; Magnetron sputtering; Metallizing; Parameter estimation; Polysilicon; Reliability; Deuterium-treated technology; Gate resistance; Metal-insulator-silicon (MIS) capacitors; Optical reliability; Gates (transistor)conference paper2-s2.0-14844297748