李嗣涔Lee, Si-Chen臺灣大學:電子工程學研究所王晨昀Wang, Chen-YunChen-YunWang2010-07-142018-07-102010-07-142018-07-102009U0001-1708200917411000http://ntur.lib.ntu.edu.tw//handle/246246/189250本篇論文成功的利用化學氣相沉積法(CVD)經由氣-液-固相 (VLS)的成長機,並且在成長過程中加上電場得到矽奈米線p-i-n 接面,論文首先探討和矽奈米線度與成長時間的關係,之後再從一系列的分析來了解矽奈米線的結構及電子特,並且在經由後段處理後使雜訊變小電性變佳,接著重複量測p-i-n 矽奈米線的電特性,最後再由靜電原子力顯微鏡(EFM)來定義所成長的矽奈米線的p 型,.i 型和 型的接面位置.The electric-field directed growth of silicon nanowire (SiNWs) p-i-n junctionas fabricated successfully by chemical vapor deposition via the vapor-liquid-solidVLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD)ystem. In this thesis, the length of SiNWs as a function of growth time was firstnvestigated. Then the electric and structure properties of the SiNWs were measuredsing a series of analysis tools. The growth mechanism and electrical characteristics ofiNWs p-i-n junction are investigated and explained. .the repeated I-V measurement of-i-n junction SiNWs are also demonstrated. In the end, the electrostatic forceicroscopy (EFM) was used to define the position of p-I and i-n junctions in theiNWs.Contentshapter 1 Introduction..............................................................................1hapter 2 Experimental............................................................................4.1 Deposition system.....................................................................................................4.2 Preparation...............................................................................................................6.3 Deposition Procedures.............................................................................................6.4 Measurement Techniques........................................................................................7.4.1 Current – Voltage characteristics....................................................................7.4.2 Thickness Measurement of buffer SiO2.........................................................8.4.3 Thickness Measurement of Metal electrodes..................................................8.4.4 Characterization of Silicon Nanowires...........................................................8hapter 3 The Electric-Field-Directed Growth of p-type, p-i-n Junctionilicon Nanowires...................................................................10.1 Vapor-Liquid-Solid (VLS) Mechanism................................................................12.1.1 VLS- assisted silicon nanowire growth.........................................................12.1.2 The role of the metal catalyst.........................................................................17.2 Electric-Field-Directed Growth of Silicon Nanowires........................................17.3 Sample Preparation...............................................................................................23-4 Results and Discussion..........................................................................................29.4.1 The growth of p-type SiNWs and the ohmic contact formation.....................29.4.2 The growth of n-type SiNWs and the ohmic contact formation.....................32.4.3 The relationship between deposition time and the length of SiNWs..............33.4.3 The growth of p-i-n junction SiNWs………………………………………….39hapter4 Electrical characteristics and EFM measurement of p-i-nunction SiNWs......................................................................59.1 Sample preparation before the electrical measurement.....................................59.2 Results.....................................................................................................................60.2.1 Repeated I-V measurement and corresponding SEM images........................60.2.2 Electrostatic force microscopy (EFM) measurement......................64hapter 5 Conclusions.............................................................................76eference..................................................................................................78ppendix A Working Principle of EFM.................................................825708464 bytesapplication/pdfen-US矽奈米線Silicon Nanowirethesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/189250/1/ntu-98-R96943101-1.pdf