Hole mobility boost of Ge p-MOSFETs by composite uniaxial stress and biaxial strain

CHIH-WEN LIULan, H.-S.H.-S.LanChen, Y.-T.Y.-T.ChenLin, J.-Y.J.-Y.LinCHIH-WEN LIU2018-09-102018-09-102012http://www.scopus.com/inward/record.url?eid=2-s2.0-84885718049&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/370964Hole mobility boost of Ge p-MOSFETs by composite uniaxial stress and biaxial strainconference paper10.1149/05009.0151ecst