Effects of mechanical strain on electrical properties and stability of £gc-Si thin film transistors on Polyimide

Chiu I.-C.Cheng I.-C.Chen J.-Z.Huang J.-J.Chen Y.-P.JIAN-ZHANG CHEN2019-09-262019-09-262009https://scholars.lib.ntu.edu.tw/handle/123456789/425256The effects of mechanical strain parallel to channel on electron field-effect mobility and electrical stability of £gc-Si thin film transistors (TFTs) on Polyimide have been investigated. The electron field-effect mobility slightly increases with the mechanical strain. However, electrical stability of TFTs becomes worse under some mechanical strain.Effects of mechanical strain on electrical properties and stability of £gc-Si thin film transistors on Polyimideconference paper2-s2.0-79952059844https://www2.scopus.com/inward/record.uri?eid=2-s2.0-79952059844&partnerID=40&md5=ef6478a313f35235ccdba8097a7f138d