Liao, Bo ZhouBo ZhouLiaoChen, Liang HsiLiang HsiChenChen, Kai ChengKai ChengChenLin, Hong YiHong YiLinTsai, Yi TingYi TingTsaiChen, Ting WeiTing WeiChenChan, Yi ChengYi ChengChanLee, Min HungMin HungLeeMING-HAN LIAO2023-06-072023-06-072022-01-01978166547943105695503https://scholars.lib.ntu.edu.tw/handle/123456789/631943In this work, carbon nanotubes (CNTs) are grown as advanced filler materials in through-silicon via (TSV). Electrical and thermal properties of CNTs are extracted by experiments and the implementation of multi-layer stacking is proposed. The resistance and thermal conductivity of CNT are measured as 10.5 ohm and 49 W/mK respectively. In accordance with its superior properties over copper, Carbon nanotubes as TSVs (CNT-TSV) have several advantages in three-dimensional integrated circuit (3DIC) technology. Signal integrity index, namely return loss and insertion loss have been evaluated by ANSYS HFSS (High frequency Structure Simulator). Within the high frequency interval (10~20 GHz), CNT-TSV has better electrical characteristics than copper. In summary, CNTs can be a promising material used in future chip on wafer stacking process.3DIC | CNT | signal integrity | thermal conductivity | TSVconference paper10.1109/ECTC51906.2022.002852-s2.0-85134687693https://api.elsevier.com/content/abstract/scopus_id/85134687693