Growth of strained Si on high-quality relaxed Si1?xGex with an intermediate Si1?yCy layer

Lee, S. W.S. W.LeeChueh, Y. L.Y. L.ChuehChen, L. J.L. J.ChenChou, L. J.L. J.ChouChen, P. S.P. S.ChenLee, M. H.M. H.LeeTsai, M.-J.M.-J.TsaiLiu, C. W.C. W.Liu2009-03-252018-07-062009-03-252018-07-062005http://ntur.lib.ntu.edu.tw//handle/246246/148228application/pdf355686 bytesapplication/pdfen-USGrowth of strained Si on high-quality relaxed Si1?xGex with an intermediate Si1?yCy layerjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/148228/1/56.pdf