國立臺灣大學電機工程學系暨研究所林浩雄2006-07-252018-07-062006-07-252018-07-062000-07-31http://ntur.lib.ntu.edu.tw//handle/246246/7790本研究以射頻電漿輔助氣態源分子束磊晶 法(RF plasma assisted GSMBE)在磷化銦 基板上成長不同氮含量的氮砷化銦異質磊 晶層樣品。並使用雙晶X光繞射儀、霍爾 效應及傅氏紅外光光譜轉換儀等方式分析 磊晶層之結構、電性及光學特性。在樣品 結構分析上，本研究中的氮砷化銦磊晶層 最高氮含量可達5.1%。電性分析則發現 樣品的含氮量愈大，氮砷化銦磊晶層中的 殘餘載子也愈高。雖然在吸收光譜中並未 出現如理論預期及早期實驗發現的能隙縮 減現象，但若考慮殘餘載子的影響，仍可 得到氮原子在砷化銦中所造成的能隙縮減 現象。In this study, we report the growth of InAsN alloys on InP substrates by using RF plasma assisted molecular beam epitaxy. The structural, electrical and optical properties of the alloy film are also investigated by using DXRD, Hall, and FTIR measurements. The highest nitrogen composition obtained in this study is 5.1%. In electrical properties, we found that the more the nitrogen composition, the higher the residual free carrier concentration. We also found that the fundamental absorption edge of InAsN is shifted toward higher energy as compared to that of InAs. The phenomeneon seems controversy to the theoretical prediction and the previous results. After considering the band filling effect, the band gap bowing effect due to N atom incorporation in InAs is reappeared.application/pdf52682 bytesapplication/pdfzh-TW國立臺灣大學電機工程學系暨研究所氮砷化銦射頻電漿輔助氣態源 分子束磊晶能隙縮減效應InAsNRF plasma assisted GSMBEbowing effectreporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/7790/1/892215E002034.pdf