張顏暉臺灣大學：物理研究所石明峰Shih, Ming FongMing FongShih2007-11-262018-06-282007-11-262018-06-282005http://ntur.lib.ntu.edu.tw//handle/246246/54529In this thesis, we report the studies on optical and electrical properties of type-II InAs/AlxGa1-xSb multiple quantum wells. The electron concentration and resistivity were studied by van der Pauw/Hall measurement. The optical transitions were investigated by photoluminescence (PL) measurement. Transmission spectra studied by Fourier transform infrared measurement (FTIR) were also reported. The band structure of samples changed substantially after removing the cap layer, and the properties of the as-grown sample with that of the etched sample was compared. Base on the temperature dependence of the electron concentration in InAs quantum well, we find the activation energy for electron ionization. The main peak of PL spectrum in the infrared range is due to the subband transition between the InAs well and AlxGa1-xSb barrier in the cap layers. The two small absorption peaks in transmission spectra can be attributed to GaSb and InAs TO phonons. The infrared absorption by InAs TO phonon provides a nondestructive way to determine the layer thickness of the InAs quantum well.Contents Chapter 1. Introduction……………………………………………………………1 1.1 Previous Work…………………………………………………………………1 1.2 Overview………………………………………………………………………2 Chapter 2. Theoretical Background…………….…………………………………4 2.1 van der Pauw Method………………………………………………………….4 2.2 Hall Effect……………………………………………………………..………..6 2.3 Electron Accumulation in InAs/AlxGa1-xSb Quantum Well………….…………8 2.3.1 Surface Donor and Surface Pinning Level……………………………..…8 2.3.2 Deep Donor in Undoped AlxGa1-xSb Barrier……………………….……..8 2.3.3 Interface Donor………………………………………………………..…..9 2.4 Photoluminescence (PL)……………………………………………………...…9 2.5 Michelson Interferometer and Fourier Transform……………………..……..12 2.5.1 Michelson Interferometer………………………………………..……..12 2.5.2 Fourier Transform…………………………………………………...….12 2.6 Sample Structure………………………………………………………………15 2.6.1 Energy Band Offset……………………………………………………...15 2.6.2 Strain Effect……………………………………………………………..19 2.6.3 Nonparabolicity Effect on the Effective Mass…………………………..22 2.6.4 Intersubband Energy………………………………………………...…...22 Chapter 3. Experiment Techniques and Procedures……………………………..26 3.1 van der Pauw/Hall Measurement……………………………………………...26 3.1.1 Sample Preparation……………………………………………………....26 3.1.2 Experiment Apparatus…………………………………………………...26 3.2 Photoluminescence Apparatus…………………………………….…………..28 3.3 Fourier Transform Infrared Spectroscopy (FTIR)……………………….…….30 Chapter 4. Result and Discussion……………………………………………..….33 4.1 Transport Properties of the Type-II InAs/AlxGa1-xSb Quantum Well System…33 4.2 Optical Properties of the Type-II InAs/AlxGa1-xSb Quantum Well System…...41 4.2.1 Exciton Binding Energy…………………………………………….…..41 4.2.2 Temperature Dependence of the PL Spectra……………………………42 4.2.3 Excitation Power Dependence of the PL Spectra……………………….43 4.3 FTIR data analysis…………………………………………………………….52 4.3.1 Optical Absorption by Phonons………………………………………….52 4.3.2 The Thickness Determination of the InAs Well…………………………52 Chapter 5. Conclusions…………………………………………………………….60 Chapter 6. Appendix……………………………………………………………….61 6.1 Finite Square Well……………………………………………………………..61 6.2 Least Square Fit……………………………………………………………….64 6.2.1 Linear model……………………………………………………………64 6.2.2 Non-linear model……………………………………...…………………6510284797 bytesapplication/pdfen-US砷化銦銻化鋁鎵量子井電子濃度雜質螢光光譜穿透光譜霍爾效應InAsAlxGa1-xSbquantum wellvan der PauwHall measurementphotoluminescenceexcitonbinding energyFourier transform infrared measurementtransmissiontransportelectron concentrationmobilityetchedBe dopanttype-IIthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/54529/1/ntu-94-R92222030-1.pdf