Epitaxial growth of Bi<inf>2</inf>Te<inf>3</inf>topological insulator thin films by temperature-gradient induced physical vapor deposition (PVD)

Lee, H.-Y.H.-Y.LeeChen, Y.-S.Y.-S.ChenLin, Y.-C.Y.-C.LinWu, J.-K.J.-K.WuLee, Y.-C.Y.-C.LeeWu, B.-K.B.-K.WuChern, M.-Y.M.-Y.ChernLiang, C.-T.C.-T.LiangYUAN-HUEI CHANG2019-12-272019-12-272016https://scholars.lib.ntu.edu.tw/handle/123456789/443504Epitaxial growth of Bi<inf>2</inf>Te<inf>3</inf>topological insulator thin films by temperature-gradient induced physical vapor deposition (PVD)journal article10.1016/j.jallcom.2016.06.2662-s2.0-84978080556https://www.scopus.com/inward/record.uri?eid=2-s2.0-84978080556&doi=10.1016%2fj.jallcom.2016.06.266&partnerID=40&md5=d57a27988445110c17e91836108c8894