Hong J.-Y.Chang S.-H.Ou Yang K.-H.Yeh P.-C.Shiu H.-W.Chen C.-H.Chiang W.-C.MINN-TSONG LIN2021-07-282021-07-282019218979https://www.scopus.com/inward/record.uri?eid=2-s2.0-85064665795&doi=10.1063%2f1.5057893&partnerID=40&md5=ff7f95617dbcad851ed3a9379ca519fdhttps://scholars.lib.ntu.edu.tw/handle/123456789/573758We report the spin-dependent transport and the I-V hysteretic characteristics in molecular-level organic spin valves containing a self-assembled-monolayer (SAM) barrier of 1,4 benzenedimethanethiol (BDMT). X-ray photoelectron spectroscopy confirms the establishment of an ordered self-assembled monolayer of BDMT with the phosphonic groups coordinated onto the ferromagnet surface. The magnetoresistive (MR) and the I-V curves characterize the transport properties of the SAM-based organic spin valves, which exhibit both types of non-volatile memory switching, i.e., the magnetoresistive and the memristive switching. The results reveal the possibility of integrating organic SAM into the future multifunctional molecular-level spintronic device applications. ? 2019 Author(s).Digital storage; Magnetic devices; Magnetoresistance; X ray photoelectron spectroscopy; 1 ,4-Benzenedimethanethiol; Hysteretic characteristics; Magnetoresistive; Molecular levels; Non-volatile memory; Phosphonic groups; Spin dependent transport; Spintronic device; Self assembled monolayersjournal article10.1063/1.50578932-s2.0-85064665795