Li C.KFang WSimoen EAoulaiche MYUH-RENN WULuo JZhao CClaeys C.2023-06-092023-06-09201419385862https://www.scopus.com/inward/record.uri?eid=2-s2.0-84905057481&doi=10.1149%2f06001.0109ecst&partnerID=40&md5=e8f8819c3b278a6512119d06411030cdhttps://scholars.lib.ntu.edu.tw/handle/123456789/632069This paper reports on the behavior of Random Telegraph Signals (RTSs) in ultra-thin buried oxide (UTBOX) Silicon-on-Insulator (SOI) nMOSFETs. Emphasis is on the amplitude ΔID, which is studied in function of the front-gate, the back-gate and the drain bias. As will be shown, a careful analysis of the drain-to-source bias-dependence in forward and reverse operation enables to determine the lateral trap position in the channel. Combined with the back-gate voltage dependence, it is concluded that the Generation- Recombination (GR) centers responsible for the RTS are in the silicon film rather than in the gate oxide. © 2014 The Electrochemical Society.MOSFET devices; Silicon on insulator technology; Back-gate voltages; Buried oxides; Random telegraph noise; Random telegraph signals; Reverse operations; Silicon films; Silicon-on-insulators; Trap positions; Electric breakdownconference paper10.1149/06001.0109ecst2-s2.0-84905057481