陳俊維臺灣大學：材料科學與工程學研究所黃振家Huang, Chen-ChiaChen-ChiaHuang2007-11-262018-06-282007-11-262018-06-282004http://ntur.lib.ntu.edu.tw//handle/246246/55298西元1989年，Liu與Cohen博士預測以共價鍵結的C3N4晶體具有超過鑽石的極高硬度，而矽碳氮三元化合物則為一種新的固體化合物晶體，有著媲美立方晶氮化硼的硬度，擁有3.8至4.7eV的寬能隙，且可能具有、高必v、傳導高速的電子特性，在紫光元件的應用上有很大的潛力。在本實驗室的製程經驗中，已成尼Q用MWCVD(microwave plasma enhanced chemical vapor deposition)合成非晶相矽碳氮三元薄膜。長久以來，在MWCVD成長SiCN製程中，始終無法發現Si-C鍵的存在，一般的解釋認為β-Si3N4與β-C3N4的結構相似，因此Si與C原子位置相互取代，所以只能發現Si-N的存在，本論文嘗試以另一種想法來解釋此現象，也就是認為在電漿氣氛沉積過程中，Si原子與N原子是優先鍵結的，所以無法發現Si-C的存在，並且探討C含量在a-SiCN薄膜中對折射率，穿透率與tauc gap的影響，C含量升高時，折射率上升、穿透率下降、tauc gap下降，最後探討a-SiCN在低溫下穿透率的提高與UV光區作為光偵測器的應用。本論文分為兩大部分: 1.第四章: Si-N鍵與Si-C件之鍵結優先性 2.第五章:碳組成對非晶相SiCN薄膜光性之探討與UV感測之應用。 實驗中以SEM觀察薄膜的表面型態，EDS與電子能譜儀(XPS)進行化學成分分析與鍵結分析，光學測膜儀量測折射率、消光係數和穿透率，XRD判別晶相的存在與否，並使用tauc plotting來計算不同製程下的薄膜光學性質，推算直接與間接能隙。此外，照光下所引起的大電流變化成為光偵測器的特徵也為此論文探討的重點。Since the theoretical prediction by Liu and Cohen, the hypothetical β-C3N4 which is covalent bonded has an expected hardness comparable or even greater than diamond. A tremendous effort has been put forth to synthesize and characterize such materials. However Si, C, N, ternary compound have excellent hardness to compete with cubic BN and have 3.8~4.7eV wide band gap. It maybe possesses high power, high speed conductive electric property, so it has great potential application in violet light device. In my laboratory process experience, amorphous ternary SiCN thin film is synthesized successfully by MWCVD (microwave plasma enhanced chemical vapor deposition). Some group couldn’t find Si-C bond in MWCVD system for a long time. The reason is that β-Si3N4 andβ-C3N4 have the same basic structure, it might be expected that both should be miscible. In another hand, I try to introduce new idea that Si-N bond sensitivity is better than Si-C band. I also discuss the carbon content effect on reflection, transmission, tauc gap. Finally transmission at low temperature and application for UV photo detector are also investigated. This thesis is divided into two parts: 1.Chapter 4:Bonding state transition from Si-C to Si-N and optical properties analysis. 2.Chapter 5:Carbon effect on amorphous SiCN film and application for UV detector. In my experiments, the composition, bonding type, crystallization, refractive index (n) and extinction coefficient (k), and surface morphology characterization of the film were carried out by EDS (energy disperse spectroscopy), XPS(X-ray photoelectron spectroscopy), XRD, Raman, SEM individually.致謝…………………………………………………………………….. II 中文摘要……………………….…………………………… VII 英文摘要………………….…………………………………..IX 目錄…………………….……………………….……………. III 第一章 緒論 1-1 目的…………………………………………………………………….4 1-2 文獻回顧……………………………………………………………….7 第二章 光學理論 2-1 薄膜…………………………………………………………………...14 2-2 n與k的定義…………………………………………………………..15 2-2-1 單一界面…………………………………………………………...15 2-2-2 多界面……………………………………………………………...16 2-2-3 週期震盪數與反射儀的侷限性…………………………………...18 2-3 光譜反射儀與橢圓儀的的弁鄔吨騆3141481 bytesapplication/pdfen-US矽碳氮三元薄膜SiCNthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/55298/1/ntu-93-R91527057-1.pdf