Growth of strained Si on high-quality relaxed Si1-x Gex with an intermediate Si1-y Cy layer

Lee, S.W.S.W.LeeChueh, Y.L.Y.L.ChuehChen, L.J.L.J.ChenChou, L.J.L.J.ChouChen, P.S.P.S.ChenLee, M.H.M.H.LeeTsai, M.-J.M.-J.TsaiCHEE-WEE LIU2020-06-162020-06-162005https://scholars.lib.ntu.edu.tw/handle/123456789/502128Growth of strained Si on high-quality relaxed Si1-x Gex with an intermediate Si1-y Cy layerconference paper10.1116/1.19136792-s2.0-31044433060https://www.scopus.com/inward/record.uri?eid=2-s2.0-31044433060&doi=10.1116%2f1.1913679&partnerID=40&md5=c87c658d7d7a2634ded920f18c43710b