Robertson J.Chen C.W.CHUN-WEI CHEN2019-11-272019-11-27199900036951https://www.scopus.com/inward/record.uri?eid=2-s2.0-0001561168&doi=10.1063%2f1.123476&partnerID=40&md5=0301bac91d81232d200ef531b8ea43b6https://scholars.lib.ntu.edu.tw/handle/123456789/432885The Schottky barrier heights of various metals on the high permitivity oxides tantalum pentoxide, barium strontium titanate, lead zirconate titanate, and strontium bismuth tantalate have been calculated as a function of the metal work function. It is found that these oxides have a dimensionless Schottky barrier pinning factor S of 0.28–0.4 and not close to 1 because S is controlled by Ti–O-type bonds not Sr–O-type bonds, as assumed in earlier work. The band offsets on silicon are asymmetric with a much smaller offset at the conduction band, so that Ta2O5 and barium strontium titanate are relatively poor barriers to electrons on Si.[SDGs]SDG11journal article10.1063/1.1234762-s2.0-0001561168