Dept. of Electr. Eng., National Taiwan Univ.Chow, H.-C.H.-C.ChowFeng, W.-S.W.-S.FengJAMES-B KUO2007-04-192018-07-062007-04-192018-07-061992-07N/Ahttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0026882551&doi=10.1049%2fip-g-2.1992.0065&partnerID=40&md5=ec85c1cbc9bad41384b60cb896660a39A simple analytical model derived from a quasi-two-dimensional analysis with a non-vanishing E-field derivative at the pinchoff point and a continuous output conductance at the transition point for short-channel MOSFETs is presented. This model also covers mobility reduction, carrier velocity saturation, body, channel-length modulation, source-drain series resistance and short-channel effects for an accurate determination of the pinchoff point location without internal numerical iterations as compared to other models. This model can be used to describe the channel-length modulation effects more accurately in circuit simulation with short-channel MOSFETs.application/pdf331457 bytesapplication/pdfen-USElectronic Circuits - Theory; Mathematical Techniques - Iterative Methods; Semiconductor Devices, MOS - Design; Semiconductor Devices, MOS - Mathematical Models; Circuit Simulation; Semiconductor devices, MOSjournal article10.1049/ip-g-2.1992.00652-s2.0-0026882551http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910042709/1/00143341.pdf