Hsiao, Fu HeFu HeHsiaoLee, Tzu YiTzu YiLeeMiao, Wen ChienWen ChienMiaoPai, Yi HuaYi HuaPaiIida, DaisukeDaisukeIidaLin, Chun LiangChun LiangLinChen, Fang ChungFang ChungChenChow, Chi WaiChi WaiChowCHIEN-CHUNG LINHorng, Ray HuaRay HuaHorngHe, Jr HauJr HauHeOhkawa, KazuhiroKazuhiroOhkawaHong, Yu HengYu HengHongChang, Chiao YunChiao YunChangKuo, Hao ChungHao ChungKuo2023-09-212023-09-212023-12-012731-9229https://scholars.lib.ntu.edu.tw/handle/123456789/635597In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.enMicro-LED | Red InGaN-based LED | Visible light communicationjournal article10.1186/s11671-023-03871-z374984032-s2.0-85165974418https://api.elsevier.com/content/abstract/scopus_id/85165974418